Researchers Demonstrated 30nm Ferroelectric Capacitor for Compact Memory

Researchers Demonstrated 30nm Ferroelectric Capacitor for Compact Memory

Researchers Demonstrated 30nm Ferroelectric Capacitor for Compact Memory

Researchers from the Institute of Science Tokyo demonstrated ultrathin ferroelectric capacitor stack with a total thickness of only 30 nm according to their published scientific paper in Advanced Electronic Materials. […]

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