by Marcel Manofu (1), Radu Voina (2), Cătălin Negrea (1) (1) Continental Automotive Romania (2) Technical University of Cluj-Napoca OUTSTANDING AWARD PAPER BY PCNS ATTENDEES presented by M.Manofu at the 2nd PCNS 10-13th September 2019, Bucharest, Romania as paper 2.2. Abstract Miniaturization leads to decreased supply voltages, which combined with higher current consumption of the integrated circuits (ICs) creates the need for more demanding...

by Lorandt Foelkel M.Eng; Würth Elektronik eiSos presented by Paul Le Nezet at the 2nd PCNS 10-13th September 2019, Bucharest, Romania as paper 2.1. ABSTRACT The paper introduces overview of state of the art on energy harvesting. It discus what type of ambient energies are available, what are the challenges in converting (& storing) these energies into usable energy and showing examples of real...

by Stephen Oxley M.Eng C.Eng MIET, TT Electronics UK presented by S.Oxley at the 2nd PCNS 10-13th September 2019, Bucharest, Romania as paper 1.3. Abstract Film resistor technologies have come a long way since metalised glass and cracked carbon films were first offered over eighty years ago as alternatives to the bulk material approaches of wirewound and composition. Metal oxide emerged in the 1950s...

by: R. Andersson, M. Bylund, S. Krause, A. M. Saleem and V. Desmaris Smoltek AB, Gothenburg, Sweden OUTSTANDING AWARD PAPER BY PCNS ATTENDEES presented by S.Krause at the 2nd PCNS 10-13th September 2019, Bucharest, Romania as paper 1.2. Abstract Complete on-chip fully solid-state 3D integrated capacitors using vertically aligned carbon nanofibers as electrodes to provide a large 3D surface in a MIM configuration have...

By A. Yializis Ph.D., PolyCharge America Inc., Tucson, Arizona presented at the 2nd PCNS 10-13th September 2019, Bucharest, Romania as paper 1.1. The paper introduces development of NanoLamTM, solid state, polymer monolithic capacitors, comprising 1000s of nano-thick, cross-linked polymer dielectric layers. The NanoLam amorphous polymer dielectrics have an intrinsic breakdown strength >1000V/mm, can withstand temperatures >200°C and have stable capacitance and dissipation factor with...